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The mission of the Electro-Optic (EO) Materials and Process Technology Division is to advance the state-of-the-art in technologies used for the production, processing, and characterization of electronic, optical, and electro-optic materials. The Division fulfills this mission through:
- Leading edge research in novel crystal materials and crystal growth technologies
- Establishment of pilot scale process demonstration facilities and prototype fabrication capabilities
- Education and training of students and industry workforce in EO technologies
- Transfer of these DoD critical technologies into commercial production
Our vision is to be recognized as an unique, value-added resource to the DoD and industry in pilot scale crystal growth technologies, novel crystal materials, and the processing and integration of these materials into devices for imaging, radar, power electronics, guidance, and communications systems.
Research Areas Include:
- Pilot scale bulk crystal growth of wide band gap semiconductors and high temperature piezoelectric materials
- Bulk crystal growth process modeling
- Thin film crystal growth; multifunctional integration
- Advanced heat spreader materials, heat sink design, and finite element simulation
- Prototype device fabrication for power electronics
- Optics finishing, sub-surface damage assessment, and mitigation
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Capabilities:
- Bulk Crystal Growth (PVT, CVD, HCVD, Czochralski, Vertical Bridgman)
- Integrated Oxide and Nitride Molecular Beam Epitaxy
- Crystal Slicing, Dicing, and Polishing (CMP)
- Materials Characterization (AFM, SEM, Interferometry, Contactless Resistivity Mapping (COREMA), Microwave Loss)
- Optics Fabrication, Finishing, and Metrology
- Finite Element Computational Tools for Process Simulation
Thrusts:
- Bulk Crystal Growth Process Development of Electronic, Optical, and Piezoelectric Materials
- Thin Film Crystal Growth of III-nitrides and Ferroelectric Oxides
- Characterization of EO Material Properties; Prototype Fabrication
- Thermal modeling and thermal management of electronic and EO devices and packaging
- Simulation of EO Crystal Growth Processes and Optimization of Manufacturing Process Conditions
DoD Sponsored Projects:
- Advanced Semi-Insulating SiC Substrate Technology (AFMD)
- Halide Chemical Vapor Deposition (HCVD) of High Performance, Low Defect Bulk SiC and Thick SiC Epitaxy (ONR, AFMD)
- Advanced Wide Band Gap Materials and Device Technology (AFMD)
- Multifunctional Oxide Films for Multifunctional RF Systems (ONR)
- Novel Crystals for Imaging and Communication (DARPA)
- GaN for RF Power Technology (AFMD, ONR)
- Damage-free Surface Processing of Semi-insulating and Conducting SiC (DARPA)
- Large Area Sapphire Solid State Re-crystallization and Polishing (ONR)
- Advanced Optics and Microelectronics Technology (MDA)
- Wide Band Gap Materials for Power Electronics (ONR)
- High Power SiC PiN Diode Manufacturing (ONR / DARPA)
- Solid State Recrystallization of Novel Crystal Materials
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